Faculty

Dr.N.B.Balamurugan

 nbbalamurugan@tce.edu

179

PUBLICATIONS       

4

SPONSORED PROJECTS

-

CONSULTANCY PROJECTS

24

M.E./Ph.D. SCHOLARS

65

SEMINAR, CONFERENCE, WORKSHOP ATTENDED

 Educational Qualification

DEGREE BRANCH INSTITUTE YEAR
B.E Electronics and Communication Engineering Thiagarajar College of Engineering,Madurai 1996
M.E Communication Systems Thiagarajar College of Engineering,Madurai 1998
PH.D Analog VLSI Device Modeling Anna University, Chennai 2009

 Experience

PERIOD NO OF YEARS DESIGNATION INSTITUTION
02-01-1998 to 09-07-2004 6.6 Years Lecturer RVSCET, Dindigul
12-07-2004 to 30-11-2009 5.5 Years Lecturer TCE, Madurai
01-12-2009 to 02-06-2013 3.5 Assistant Professor TCE, Madurai
03-06-2013 to 23-03-22 8.8 Years Associate Professor TCE, Madurai
23-03-2022 to Till date 1 Professor TCE, Madurai

 Publications

 Journals
  1. E Rajalakshmi, NB Balamurugan, M Hemalatha, M Suguna, "A Novel high-voltage DMG Fe-doped AlGaN/AlN/GaN HEMTs with sheet charge density model", Microelectronics Journal
  2. V Charumathi, NB Balamurugan, M Suguna, D Sriram Kumar, " Optimization and performance indication of surrounding gate tunnel field‐effect transistors based on machine learning", International Journal of Numerical Modelling: Electronic Networks, Devices and Fields,
  3. S Raj Kumar, NB Balamurugan, M Suguna, D Sriram Kumar, "Numerical Investigation of Zero-Dimensional Freestanding Nanowire FER-AlGaN/GaN HEMTs for Low-Power Applications", Arabian Journal for Science and Engineering , 2023.
  4. M. Hemalatha, N B Balamurugan, M suguna, D Sriram Kumar, " Impact of Variation in Fin Thickness and Self-Heating on the Output Characteristics of Triangular Gate FinFETs", Silicon, 2023, 1-14.
  5. Suguna M, Kaveri R, Hemalatha M, Balamurugan NB, Sriramkumar D, Dhanaselvam PS. Analytical modeling and Simulation Based Investigation of Triple material surrounding gate heterojunction tunnel FET. Silicon. 2022 Mar 16:1-2.
  6. V. charumathi, N.B Balamurugan, M suguna, M Hemlatha " Novel attributes and analog performance analysis of FINFET for high sensitive Biosensor, Silicon, (2022).
  7. Suguna M, Kaveri R, Sree VA, Hemalatha M, Balamurugan NB. Modeling and Simulation Based Investigation of Triple Material Surrounding Gate Tunnel FET for Low Power Application. Silicon. 2021 Sep 25:1-9.
  8. G. Lakshmi Priya, N.B. Balamurugan, “Triple Material Surrounding Gate Junctionless Tunnel FET Based 6T SRAM Design for Low Leakage Memory System”, Silicon, 2021.
  9. Dhanaselvam, P. Suveetha, Dr. N. B. Balamurugan. "Pressure Sensors Using Si/ZnO Heterojunction Diode." Silicon (2021)
  10. Manikandan, S., and N. B. Balamurugan. "A Physics Based Threshold Voltage Modeling of Trigate Junctionless FinFETs Considering Gaussian Doping." Silicon , 2021.
  11. M. Venkatesh and N.B.Balamurugan, “Influence of Threshold Voltage Performance Analysis on Dual Halo Gate Stacked Triple Material Dual Gate TFET for Ultra Low Power Applications,” Silicon, pp. 1–13, 2021.
  12. G. Lakshmi Priya, N.B. Balamurugan, “Investigation of Ambipolar conduction and RF stability performance in novel germanium source dual halo dielectric triple material surrounding gate TFET”, Silicon, pp. 911-918, 2021.
  13. M. Venkatesh, M. Suguna, and N.B. Balamurugan, “Influence of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET for Improved Analog/RF Performance,” Silicon, pp. 1–9, 2020.
  14. S. Manikandan, N.B. Balamurugan, “Analytical model of Double Gate Stacked junctionless transistor considering source/drain depletion effects for CMOS low power applications”, Silicon, pp. 2053-2063, 2020.
  15. S. Manikandan, N.B. Balamurugan, “The improved RF/stability and linearity performance of the ultrathin-body Gaussian-doped junctionless FinFET”, Journal of Computational Electronics, pp. 613-621, 2020
  16. T.V Kumar, N.B.Balamurugan, "Three dimensional anayltical modeling for small-geomentry AIInSb/AISb/InSb double-gate high-electron mobility transistors(DG-HEMTs)", Journal of Computational Electronics, pp.1107-1115,2020.
  17. S Manikandan, NB Balamurugan, D Nirmal, Analytical model of double gate stacked oxide junctionless transistor considering source/drain depletion effects for CMOS low power applications, silicon-Springer, 1-11
  18. G Lakshmi Priya, NB Balamurugan, D Saraswathi, Impact of Electricfield Distribution on the performance of Dual Material Gate Work function Engineered Surrounding Gate Nanowire Tunnel FETs, International Journal of Applied Engineering Research, Vol 10, Issue 1, Pages 1018-1023
  19. V Palanichamy, NB Balamurugan, COMPARATIVE ANALYSIS OF QUANTUM EFFECTS IN NANO-SCALE MULTIGATE MOSFETS USING VARIATIONAL APPROACH, Journal of Engineering Science and Technology, Pages 224-234
  20. NB Balamurugan, C Priya, Effects of Roughness Scattering in Carrier Transport of Near Ballistic Silicon NanoWire MOSFET, Journal of Applied Mechanics & Materials, Issue 573.
  21. Norio Takahashi, Vimala Palanichamy, NB Balamurugan, Analytical modeling of quantization effects in surrounding-gate MOSFETs, COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering.
  22. S.Preethi, Dr.N.B.Balamurugan, Analytical Modeling of Dual Material Surrounding Gate Junctionless MOSFET Using Finite Differentiation Method, Silicon- Springer, 2020
  23. M Venkatesh, M Suguna, NB Balamurugan, Subthreshold Performance Analysis of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel Field Effect Transistor for Ultra Low Power Applications,Journal of Electronic Materials 48 (10), 6724-6734
  24. S Manikandan, NB Balamurugan, TSA SamuelImpact of uniform and non-uniform doping variations for ultrathin body junctionless FinFETs,Materials Science in Semiconductor Processing 104, 104653
  25. Dharshana, NB Balamurugan, TS Samuel ,Journal of Nano Research ,2019,57, 68-76, “An Analytical Modeling and Simulation of Surrounding Gate TFET with an Impact of Dual Material Gate and Stacked Oxide for Low Power Applications”
  26. K Sowmya, NB Balamurugan,” Modeling and simulation of dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor using finite difference method January 2019International Journal of Numerical Modelling Electronic Networks Devices and Fields 32(1) DOI: 10.1002/jnm.2546
  27. K Sowmya, NB Balamurugan, V Parvathy,2019 “A 2-D MODELING OF Fe DOPED DUAL MATERIAL GATE Algan/Aln/Gan HIGH ELECTRON MOBILITY TRANSISTORS FOR HIGH FREQUENCY APPLICATIONS”AEU-International Journal Of Electronics And Communications
  28. M.Venkatesh & N. B Balamurugan 2019,”New subthreshold performance analysis of germanium based dual halo gate stacked triple material surrounding gate tunnel field effect transistor”,Superlattices and Microstructures-Elsevier (130),485-498
  29. Buvaneswari, B & Balamurugan, NB 2018, ‘Sensitivity analysis of double gate metal oxide semiconductor field effect transistor for bio-sensing applications', Journal of Nanoelectronics and Optoelectronics.
  30. Buvaneswari, B & Balamurugan, NB 2018, '2D analytical modeling and simulation dual material DG MOSFET for biosensing application', AEU-International Journal of Electronics and Communications.
  31. G.Lakshmi Priya, N.B.Balamurugan,” New Dual Material Double Gate Junctionless Tunnel FET: Subthreshold Modeling and Simulation”, International Journal of Electronics and Communications (2018) https://doi.org/10.1016/j.aeue.2018.11.037
  32. B. BUVANESWARI, N.B.Balamurugan, ”Comparative analytical analysis of various configurations of nanoscaled dielectric-modulated double gate MOSFET based biosensors” Journal of Optoelectronics and Advanced materials, Vol.20,no.9-10 Sep-Oct (2018).
  33. T. Venish kumar, N.B. Balamurugan ,” Analytical Modeling of InSb/AlInSb Heterostructure Dual gate High Electron Mobility Transistors” International Journal of Electronics and Communications (2018), doi: https://doi.org/10.1016/j.aeue.2018.06.033
  34. G.Lakshmi Priya, N.B.Balamurugan, “Subthreshold Modeling of Triple Material Gate-All-Around Junctionless Tunnel FET with Germanium and High-K Gate Dielectric Material” , Journal of Microelectronics, Electronic Components and Materials Vol. 48, No. 1(2018), 53 – 61
  35. Saraswathi D, Lakshmi Priya G, Balamurugan NB, Manikandan S, “A 2D Threshold Voltage Model for Triple Material Gate-All-Around Silicon Nanowire Tunnel FET”, International Journal of Applied Engineering and Research (ISSN 9734562), pp. 1376-1381, Vol.10, N0.2, 2015.
  36. P.Vanitha, Dr.N.B Balamurugan G. Lakshmi Priya “Triple Material Surrounding Gate (TMSG) Nanoscale Tunnel FET - Analytical Modeling and Simulation”, Journal of Semiconductor Technology and Science, ISSN 2233 – 4866,Vol.15,No.6,2015.
  37. Saraswathi D, Lakshmi Priya G, Balamurugan NB, Manikandan S, “Transconductance-to-Drain Current Ratio and Subthreshold Analysis of Tri-Material Gate-All-Around Silicon Nanowire Tunnel FET”, International Journal of Applied Engineering and Research (ISSN 9734562), pp. 1381-1387, Vol.10, N0.2, 2015.
  38. D.Saraswathi , Dr.N.B.Balamurugan , and G.Lakshmi Priya, “Tri-Material Gate Work Function Engineering of Gate-AllAround (Gaa) Nanowire Tunnel Field Effect Transistors: Scale Length Model”, International Journal of Applied Engineering and Research, Volume 10, Number 2 (2015) pp. 3627-3638.
  39. Theodore Chandra, S, Balamurugan, NB, Lakshmi Priya, G & Manikandan, S 2015, ‘Analysis of Subthreshold Behavior of AlInSb/InSb High Electron Mobility Transistors (HEMTs)’, Chinese Physics B Impact Factor: 1.392, Vol. 24, No. 7 (2015) 076105 (1-5).
  40. Theodore Chandra, S, Balamurugan, NB, Bhuvaneswari, M, Anbuselvan, N & Mohankumar, N 2015, ‘Analysis of Charge Density and Fermi Level of AlInSb/InSb Single Gate High Electron Mobility Transistor’, Journal of Semiconductors, vol. 36, no. 6, pp. 064003-1 - 064003-6
  41. Theodore Chandra, S, Balamurugan, NB, Lakshmi Priya, G, Muralidharan, V, Sugirtha Ruba Rani, DS 2015, ‘Compact modeling of gate engineered triple material gate (TMG) AlInSb/InSb high electron mobility transistors’, Journal of Optoelectronics and Advanced Materials, vol.17, no.1-2, pp.222 - 228.
  42. G.Lakshmi Priya, N.B.Balamurugan, “Triple Material Gate Work Function Engineering in Surrounding Gate Nanoscale MOSFETs for reduced Short Channel Effects (SCE’s): Scale Length Model”, International Journal of ChemTech Research, vol.7, No.02, 2015, pp.1005-1013.
  43. Theodore Chandra, S, Balamurugan, NB, Bhuvaneswari, M, Anbuselvan, N & Mohankumar, N 2015, ‘Analysis of Charge Density and Fermi Level of AlInSb/InSb Single Gate High Electron Mobility Transistor’, Journal of Semiconductors, vol.36, no.6 Impact Factor: 0.378.
  44. M.Karthigai Pandian, Dr.N.B.Balamurugan and S. Manikandan, 'Analytical I-V Modeling of Accumulation Mode Cylindrical Surrounding Gate Nanowire Mosfets', International Journal of Applied Engineering and Research, Volume 9, Number 22 (2014) pp. 17745-17758.
  45. Sheela. L, N. B. Balamurugan, S. Sudha and J. Jasmine, 'Analysis of Tunnelling Rate Effect on Single Electron Transistor',Journal of Electrical Engineering and Technology Vol. 9, No. 5: 1670-1676, 2014.
  46. TS Arun Samuel, NB Balamurugan, T Niranjana and B Samyuktha, ' Analytical Surface Potential model with TCAD Simulation verification for evalution of Surrounding Gate TFET' Journal of Electrical Engineering and Technology,Vol.9,No.2, 655-661,2013.
  47. P Suveetha Dhanaselvam, NB Balamurugan, and N Basheer Ahamed, ‘A Charge Control model of Surrounding gate MOSFET’, International Journal of Engineering and Computer science, vol. 2, no. 3, pp.777-780,2013.
  48. Theodore Chandra, S, Balamurugan, NB, Subalakshmi, G, Shalini, T & Lakshmi Priya, G 2014, ‘Compact analytical model for single gate AlInSb/InSb high electron mobility transistors’, Journal of Semiconductors, vol.35, no.11, pp.114003-1 to 114003-5 (ISSN: 1674-4926 Impact Factor: 0.378.
  49. M. Karthigai Pandian and N.B. Balamurugan, 'Analytical Threshold Voltage Modeling of Surrounding Gate Silicon Nanowire Transistors with Different Geometries', Journal of Electrical Engineering Technology Vol. 9, No. 6: 2079-2088, 2014.
  50. Theodore Chandra, S & Balamurugan, NB 2014, ‘Performance analysis of silicon nanowire transistors considering effective oxide thickness of high-k gate dielectric’, Journal of Semiconductors, vol.35, no.4, pp.044001-1 to 044001-4 .
  51. TS Arun Samuel, NB Balamurugan, 2014, ‘Analytical Modeling and Simulation of Germanium Single Gate Silicon on Insulator TFET’, Journal of Semiconductors, vol.3, in press.
  52. P Suveetha Dhanaselvam, & NB Balamurugan, N Basheer Ahamed, 2013, ‘A Charge Control model of Surrounding gate MOSFET’, International Journal of Engineering and Computer science, vol. 2, no. 3, pp.777-780.
  53. P Suveetha Dhanaselvam, & NB Balamurugan, Vivek Chakaravarthi, GC, Ramesh, RP & Sathishkumar, BR 2013, ’A 2D Analytical Modeling of Single halo Triple material Surrounding gate (SHTMSG) MOSFET’, Journal of Electrical Engineering & Technology, accepted for Publication.
  54. P Suveetha Dhanaselvam, & NB Balamurugan, 2013, ’Performance analysis of fully depleted triple material surrounding gate(TMSG) SOI MOSFET’, Journal of Computational Electronics, vol. 12, no. 4.
  55. P Suveetha Dhanaselvam, & NB Balamurugan, 2013, ‘A 2D Transconductance and Sub-threshold behavior model for triple material surrounding gate MOSFETs’, Microelectronics Journal, vol. 44, no. 12, pp. 1159-1164.
  56. TS Arun Samuel, NB Balamurugan, Sibitha,S, Saranya,R & Vanisri, D 2013, ‘Analytical Modeling and Simulation of Dual Material Gate Tunnel Field Effect Transistors’, Journal of Electrical Engineering & Technology, vol. 8, no. 6, pp. 1481-1486.
  57. P Suveetha Dhanaselvam, & NB Balamurugan, 2013, ‘Analytical approach of a nanoscale triple-material surrounding gate MOSFETs for reduced short channel effects’, Microelectronics Journal, vol. 44, no. 5, pp. 400-404.
  58. TS Arun Samuel, NB Balamurugan, Bhuvaneswari,S, Sharmila, D & Padmapriya, K 2013, ‘Analytical modelling and simulation of single-gate SOI TFET for low-power applications’, International Journal of Electronics, online.
  59. N.B.Balamurugan, An analytical 2D Model for a symmetric double gate MOSFET considering quantum mechanical effects, International journal of Micro and Nano systems, vol-2,pp.41-45,2011
  60. N.B.Balamurugan, Compact Thermal Noise modeling for Submicron MOSFETs , International Journal of Micro and Nano Electronics, Circuits And Systems, PP.43-47,Vol.3,2011
  61. N.B.Balamurugan, Modeling And Simulation Of Dual Material Surrounding Gate Nanoscale Soi Mosfets With Enhanced Transconductance To Drain Current Ratio For Wireless Communication, Journal Of Semiconductor Technology And Science, 2009, June.
  62. N.B.Balamurugan, New 2D Analytical Threshold Voltage Model For Dual Material Surrounding Gate Soi Mosfet For Low Power Applications, AMSE Journal, 2009, June.
  63. N.B.Balamurugan, New Scaling Theory For Effective Conducting Path Effect Of Dual Material Surrounding Gate Mosfet In Cmos Applications , AMSE Journal, 2009 June.
  64. N.B.Balamurugan, Two Dimensional Analytical Modeling Of Surface Potential And Threshold Voltage Of A Dual Material Surrounding Gate (Dmsg) Mosfets For Nanoscale Cmos Applications, International Journal Of Image Processing And Networking Techniques, 2008 Vol. 1, No. 1, pp. 89-96.
  65. N.B.Balamurugan, A Novel 2-D Model For The Surface Potential And Threshold Voltage Of Nanoscale Dual Material Surrounding Gate (Dmsg) Mosfets, International Engineering And Technology Journal Of Communication Techniques, 2008 Vol. 2, No. 1, pp. 1-7
  66. N.B.Balamurugan, An Analytical Modeling Of Threshold And Subthreshold Swing On Dual Material Surrounding Gate Nanoscale Mosfets For High Speed Wireless Communication, Journal Of Semiconductor Technology And Science, 2008 Vol. 8, No. 3, pp. 221-226
  67. N.B.Balamurugan, A Phenomenal Scaling Theory For The Effective Conductive Path Effect Of Dual Material Surrounding Gate (Dmsg) Nanoscale Mosfets, International Engineering And Technology Journal Of Communication Techniques, 2008 Vol. 2, No. 1, pp. 8-13.
  68. N.B.Balamurugan, A New Scaling Theory For The Effective Conducting Path Effect Of Dual Material Surrounding Gate Nano Scale Mosfets, Journal Of Semiconductor Technology And Science, 2008 Vol. 8, No. 1, pp. 92-97
  69. N.B.Balamurugan, Dual Material Surrounding Gate Nanoscale Mosfets: A Novel Device For Reliable Nanoscale Cmos Applications, Far East Journal Of Electronics And Communication, 2007 Vol. 1, No. 2, pp. 135-146.
  70. P.vimala & N. B. Balamurugan, “Modeling and Simulation of Centroid and Inversion charge density in Cylindrical Surrounding Gate MOSFETs including Quantum Effects”, Journal of Semiconductors, vol.34, no.11,pp. 114001-6, 2013.
  71. R Kaveri, V A nithya sree, M Hemalatha, Dr.N.B Balamurugan , Modeling and simulation based investigation of Triple Material Surrounding gate Tunnel FET for Low power application, Silicon,2021.
  72. P.vimala & N. B. Balamurugan, Modelling the centroid and charge density in double-gate MOSFETs including quantum effects, International Journal of Electronics, vol.100, no.9, pp.1283–1295, 2013.
  73. P.vimala & N.B.Balamurugan Quantum Mechanical Compact Modeling of Symmetric Double-Gate MOSFETs using Variational approach, Journal of Semiconductors, Vol. 33, No. 3, pp. 034001-1 to 034001-5,2012
  74. P.vimala & N.B.Balamurugan Analytical approach of a nanoscale triple material surrounding gate (TMSG) MOSFETs for reduced short channel effects, Microelectronics Journal, Volume 44, Issue 5, Pages 400–404, 2013
  75. P.vimala & N.B.Balamurugan Analytical Modeling and Simulation of single gate SOI TFET for low power applications, International Journal of Electronics, pp.1–10.Available at online, 2013
  76. TS Arun Samuel, NB Balamurugan, 2013, ‘An Analytical Modeling and Simulation of Dual Material Double Gate Tunnel Field Effect Transistor for Low Power Applications’, Journal of Electrical Engineering & Technology, vol. 9, no. 1, pp. 247-253.
  77. P.vimala & N. B. Balamurugan, “A Compact Quantum Model for Cylindrical Surrounding Gate MOSFETs using High-K Dielectrics”, Journal of Electrical Engineering
  78. P.vimala & N. B. Balamurugan, “Modeling and simulation of nano scale Tri-gate MOSFETs including quantum effects”, Journal of Semiconductors, vol.35, no.3, 2014 in Forthcoming articles.
  79. P.vimala & N. B. Balamurugan, “A New Analytical model for Nanoscale Trigate SOI MOSFETs Including Quantum Effects”, IEEE Journal of the Electron Devices Society, Accepted. DOI: 10.1109/JEDS.2014.2298915.
  80. Theodore Chandra, S, Balamurugan, NB, Lakshmi Priya, G 2015, "Subthreshold behaviour of AlInSb/InSb high electron mobility transistor", Vol.24, No.7, pp 076105-1 to 076105-5.
  81. P.vimala & N. B. Balamurugan, “Analytical Modeling of Quantum Effects in Surrounding Gate MOSFETs”, COMPEL- The International Journal for Computation and Mathematics in Electrical and Electronic Engineering Journal of Semiconductors, vol.33, no.1/2, 2014 in Early Cite Article.
  82. N.B.Balamurugan,Theodore Chandra,S., Suveeta,Vanitha,2D Analytical Surface Potential Model for Dual Material Gate MOSFETs with Reduced Short Channel EffectsInternational Journal of Science and Engineering Support Society18,49-58,2010
  83. N.B.Balamurugan, An Optimal Strategy For Analysing Characteristics Of Optical Fiber Waveguide , Journal Of Optics, 1997
  84. N.B.Balamurugan, Analytical approach of a nanoscale triple material surrounding gate (TMSG) MOSFETs for reduced short channel effects., Microelectronics Journal, Volume 44, Issue 5, Pages 400404
  85. N.B.Balamurugan, Analytical modeling of drain current, capacitance and transconductance in symmetric double-gate MOSFETs Considering quantum effects, International Journal of Nanoscience, Vol. 12, No. 1, 1350005 (9 pages)
  86. N.B.Balamurugan, Quantum Mechanical Compact Modeling of Symmetric Double-Gate MOSFETs using Variational approach, Journal of Semiconductors, Vol. 33, No. 3 pp. 034001-1 to 034001-5
 Conferences
  1. V Karutharaja, NB Balamurugan, M Suguna, D Sriram Kumar, "A Comparative Review: Performance Parameters of Fin, Nanowire and Nanosheet Field Effect Transistors on 5nm Node", 2024 7th International Conference on Devices, Circuits and Systems (ICDCS)
  2. E Rajalakshmi, M Kaviya, M Suguna, NB Balamurugan, "A Critical Overview on Technological Progress in Nanosheets", 2024 Second International Conference on Emerging Trends in Information Technology and Engineering (ICETITE)
  3. E. Rajalakshmi, N B Balamurugan, "A New Perspective on Sensitivity for Biosensing Applications in Nanocavity-Embedded Dual Metal Surrounding Gate TFETs". 2023 International Conference on Research Methodologies in Knowledge Management, Artificial Intelligence and Telecommunication Engineering (RMKMATE)
  4. Dr. N B Balamurugan, M. Hemalatha, "Design and OPtimization of Fin Field Effect Transistor using Machine Learning Algorithms", 36th International conference on VLSI Design and 23rd International Confernce on Embedded Systems (VLSID 2023)
  5. Dr.N.B Balamurugan, " MULTIOBJECTIVE OPTIMIZATION OF TFETs WITH MACHINE LEARNING METHODS"35th International Conference on VLSI Design and 21st International Conference on Embedded Systems (VLSID 2022).
  6. Dr. N.B Balamurugan, Hardware Implementation of Vedic Arithmetic using Spartan-3E FPGA, International conference on contemporary engineering and technology, 11th March 2021, Prince Shri Venkateshwara padmavathy engineering college , chennai, India.
  7. Dr.N.B Balamurugan, A Novel Digit Parallel Multiplier for Elliptic curve cryptography, International conference on contemporary engineering and technology, 10th March 2021, Prince Shri Venkateshwara padmavathy engineering college, Chennai. India.
  8. Analytical Modeling of Gate Engineered Triple Material Gate(TMG) AlGaN/GaN High Electron Mobility Transistors for CMOS ApplicationsInternational Conference on NextGen Electronic Technologies: Silicon to Software (ICNETS2),March 23, 2017 – VIT , Chennai, India
  9. Analyze the Behavior of Sub Threshold in Nanoscale Triple Material Gate AlGaN/GaN/AlN HEMT by analytical Modeling And Simulation,International Conference On Microwave and Optical Communication,2nd March 2017 ,Alagappa Chettiar College Of Engineering And Technology, Karaikudi.
  10. Dr.N.B.Balamurugan ,An Analytical study for the effect of gate engineering in Tri Material Gate All Around Junctionless MOSFETs,International Conference on Computing, Communication, Nanophotonics, Nanoscience, Nanomaterials and Nanotechnology I2C4N-2K16 Holy Grace Academy of Engg.,7-8th April,2016 Kerala,India. International2016
  11. Dr.N.B.Balamurugan ,Two Isolated Depletion Regions Analytical Model Of Sheet Carrier Density And Thershold Voltage For InAlAs/InGaAs Heterostructure Of HEMT. International Conference On Microwave and Optical Communication,2nd March 2017 ,Alagappa Chettiar College Of Engineering And Technology, Karaikudi.
  12. Dr.N.B.Balamurugan , Analyze the Behavior of Sub Threshold in Nanoscale Triple Material Gate AlGaN/GaN/AlN HEMT by analytical Modeling And Simulation,International Conference On Microwave and Optical Communication,2nd March 2017 ,Alagappa Chettiar College Of Engineering And Technology, Karaikudi.
  13. Dr.N.B.Balamurugan , A 2D Analytical Modeling Of Dual Material Surrounding Gate Junctionless Tunnel Field Effect Transistor,International Conference On Microwave and Optical Communication,2nd March 2017, Alagappa Chettiar College Of Engineering And Technology, Karaikudi.
  14. Dr.N.B.Balamurugan, Analytical Modeling of Gate Engineered Triple Material Gate(TMG) AlGaN/GaN High Electron Mobility Transistors for CMOS Applications,International Conference on NextGen Electronic Technologies: Silicon to Software (ICNETS2),March 23, 2017 – VIT , Chennai, India.
  15. Dr.N.B.Balamurugan ,Analytical Modeling of Centroid and Gate Voltage in Quad gate MOSFET including Quantum Mechanical Efect, International Conference on Electrical,Electronics and Communication-(ICEEC’16) Alagappa Chettiar College of ENGG & TECH.,31st March-1st April 2016
  16. Dr.N.B.Balamurugan, Analytical Modeling of Dual Material Gate All Around Stack Architecture of Tunnel FET, VLSID 2016,JANUARY 4 – 8 ,KOLKATTA, INDIA International 2016
  17. Sheik Arafat, I & Balamurugan, NB 2016, ‘Influence of scattering in near ballistic silicon nanowire metal-oxide-semiconductor field effect transistor’, Journal of Nanoscience and Nanotechnology, Vol. 16, no. 6, pp.6032-6036 (ISSN 1533-4880)
  18. Sheik Arafat, I & Balamurugan, NB 2015, ‘Temperature effect in scattered SiNW MOSFET’, International Journal of Applied Engineering Research, Vol. 10, no. 55, pp. 123-127. (ISSN 0973-4562)
  19. Sheik Arafat, I, Balamurugan, NB 2014, ‘Role of Discrete Dopants in Carrier Transport of Near Ballistic Silicon NanoWire MOSFET’, Jokull Journal, Vol. 64, No.3 pp. 382-390
  20. Karthigai Pandian, M, Balamurugan, NB, & Manikandan, S 2014, ‘Analytical modeling of junctionless surrorunding gate silicon nanowire transistors’, Journal of Nanoelecronics and Optoelectronics, vol. 9, no. 4, pp. 468-473 (ISSN: 1555-1318)
  21. P Suveetha Dhanaselvam, & N.B.Balamurugan, “A 2D sub – threshold current model for single halo triple material surrounding gate (SHTMSG) MOSFETs”, Microelectronics Journal, 45 (2014) 574 – 577.
  22. Karthigai Pandian, M, & Balamurugan, NB 2014, ‘Anlytical threshold voltage modeling of surrorunding gate silicon nanowire transistors with different geometries’, Journal of Electrical Engineering & Technology, vol. 9, no. 6, pp. 2079-2088 (ISSN: 1975-0102)
  23. Karthigai Pandian, M, Balamurugan, NB, & Pricilla, A 2013, ‘Potential and quantum threshold voltage modeling of gate-all-around nanowire MOSFETs’, Active and Passive Electronic Components (ISSN: 1563-5031)
  24. P.Suveetha Dhanaselvam & N.B.Balamurugan, “A 2D Novel Approach of Partially Depleted Dual Material MOSFETs for Reduced Short Channel Effects”, Nanostructured Materials for Electronics, Energy and Environmental Applications,31 – 36 (2010)
  25. Balamurugan N.B., Sankaranarayanan K. and Fathima John .M, “2D Transonductance to Drain Current Ratio Modeling of Dual Material Surrounding Gate Nanoscale SOI MOSFETS”, Journal Of Semiconductor Technology And Science, vol. 9, no. 2, pp. 110-115,June 2009.
  26. Dr.N.B.Balamurugan "A Novel Scaling Theory for Effective Conductive Path Effect of Double gate (DG) MOSFETs for Nano – Scale CMOS Circuit Design",IEEE – International Conference on Signal Processing, Commnications and Networking, MIT, Anna Univeristy,Chennai,2008
  27. Dr.N.B.Balamurugan,M.Surya Abirami,K.Sowmya" Analytical Modeling of Centroid and Gate Voltage in Quad gate MOSFET including Quantum Mechanical Efect" International Conference on Electrical,Electronics and Communication-(ICEEC’16) Alagappa Chettiar College of ENGG & TECH.,31st March-1st April 2016
  28. Dr.N.B.Balamurugan, S.Manikandan An Analytical study for the effect of gate engineering in Tri Material Gate All Around Junctionless MOSFETs,International Conference on Computing,Communication,Nanophotonics,Nanoscience, Nanomaterials and Nanotechnology I2C4N-2K16 Holy Grace Academy of Engg.,7-8th April,2016 Kerala,India.
  29. Dr.N.B.Balamurugan,M.Surya Abirami,B.Buvaneswari,K.Sowmya "Analytical Modeling of Nanoscale Quad gate MOSFET including Quantum Mechanical Effects" IEEE conference on Emerging Devices and smart system March 4 – 5 , 2016 ICEDSS2016 Mahendra Engineering College
  30. Dr.N.B.Balamurugan, Shri Kalpa Virutcha, M.Radhika, M.MangalaBency, S.Elaswari "Comparitive Analysis of Dual Material Gate and Gate All Around Tunnel Field Effect Transistor for Low Power Applications" NCCT ’16 National conference on Communication Technologies, March- 23,2016MEPCO Schlenk Engineering College
  31. Dr.N.B.Balamurugan,Mr.S.Manikandan,Ms.G.Srimathi,Lakshmi Priya.G, "Analytical Modeling of Dual Material Gate All Around Stack Architecture of Tunnel FET,VLSI DESIGN 2016, Kolkatta,India, January 4 - 8, 2016. 29th International Conference on VLSI Design.
  32. Saraswathi D , Balamurugan N B, Lakshmi Priya G, Manikandan S,"A Compact Analytical Model for 2-D Triple Material Surrounding Gate Nanowire Tunnel Field Effect Transistors", ICICA'14, NIT Durgapur, Dec 22-24 2014. Published in proceedings of springer Intelligent Computing and Applications, vol.343.
  33. Vanitha P, Lakshmi Priya G, Balamurugan N B, Theodore Chandra S, Manikandan S,"Analytical Approach on the Scale Length Model for Triple Material Surrounding Gate Tunnel Field Effect Transistors (TMSG – TFET’s)", ICICA'14, NIT Durgapur, Dec 22-24 2014. Published in proceedings of springer Intelligent Computing and Applications, vol.343.
  34. N.B.Balamurugan, An Analytical 2D model for a Symmetric Double Gate MOSFET considering Quantum Mechanical Effects, ICCOS’11, Karunya university, Coimbatore, 17th to 18th Mar2011
  35. N.B.Balamurugan, Potential and Electric field model for 18nm SG Tunnel Field Effect Transistor, ICEVENT 2013SKP Engg. College,Thiruvannamalai.7th ,8th
  36. N.B.Balamurugan, Performance analysis and threshold voltage modeling of surrounding gate Silicon Nanowire Transistors, ICEVENT 2013SKP Engg. College,Thiruvannamalai.7th ,8th
  37. N.B.Balamurugan, Parameter Extraction for single electron transistor based on master equation approach , ICEVENT 2013SKP Engg. College,Thiruvannamalai.7th ,8th
  38. N.B.Balamurugan FPGA Synthesis of SIRM Fuzzy System Classication of Diabetil Epilepsy Risk Level, ICMOC 2012Noorul Islam Centre for higher Education. 10th and 11th April 2012
  39. N.B.Balamurugan, Electrical Characteristics of silicon and Germanium Nanowire transistors-A simulation study, CODIS 2012Jadavpur University, Kolkata 28th and 29th Dec 2012
  40. N.B.Balamurugan Quantum Centroid Modeling for Surrounding Gate MOSFETs, CODIS 2012Jadavpur University, Kolkata28th and 29th Dec 2012
  41. N.B.Balamurugan, Modeling the Inversion Charge Centroid in Tri-Gate MOSFETs including Quantum Effects, ICEVENT 2013SKP Engg. College,Thiruvannamalai.7th ,8th
  42. N.B.Balamurugan, High performance double gate Silicon Nanowire Transistors, ICEVENT 2013SKP Engg. College,Thiruvannamalai.7th ,8th
  43. N.B.Balamurugan, Modeling the Centroid and Charge density in Double Gate MOSFETs including Quantum Effects, ICANN-2011,IIT Guwahati, 8th to 10th Dec 2011
  44. N.B.Balamurugan, Synthesis, Fabrication Techniques and Applications of high performance Silicon Nanowire Transistors, ICMAT2011,Singapore, 26th June to 1st July,2011
  45. N.B.Balamurugan, A 2D Analytical surface potential model of multigate Silicon Nanowire Transistors for Biosensor Applications, ICMAT2011,Singapore, 26th June to 1st July,2011
  46. N.B.Balamurugan, Compact Thermal Noise modeling for Submicron MOSFETs , ICCOS’11 Karunya university, Coimbatore. 17th to 18th Mar2011 ,
  47. N.B.Balamurugan, Analytical model for deep submicron MOSFETs thermal noise, DSC2011 Muthayammal college of engg and Tech, Rasipuram, 26th Feb2011,
  48. N.B.Balamurugan, 2D Analytical charge density model for Double Gate MOSFET including Quantum Mechanical Effects, DSC2011 Muthayammal college of engg and Tech, Rasipuram, 26th Feb2011 ,
  49. N.B.Balamurugan, Analytical model for deep submicron MOSFETs thermal noise, DSC2011 Muthayammal college of engg and Tech, Rasipuram, 26th Feb2011,
  50. N.B.Balamurugan, FPGA Synthesis of SIRM Fuzzy System Classication, ICMOC 2012 Noorul Islam Centre,
  51. N.B.Balamurugan, A 2D Approach of Partially depleted Dual material MOSFETs for Reduced short channel effects, NANO 2010,K.S.Rangasamy College of Technology, 13th to 16th Dec 2010
  52. N.B.Balamurugan, Modeling of Nanoscale Double gate MOSFET, NANO 2010,K.S.Rangasamy College of Technology, 13th to 16th Dec 2010
  53. N.B.Balamurugan, Two Dimensional Analytical Modeling of a Nanoscale Dual Material Gate MOSFETs, MiNDSS 2010 , 2010
  54. N.B.Balamurugan, Technology Assessment of Hybrid Approaches to the Fabrication of High Performance Silicon Nanowire Transistors, ETWT2010, 2010
  55. N.B.Balamurugan, Performance analysis of dual-material gate MOSFETs for reduced short channel effects, ETWT2010, 2010
  56. N.B.Balamurugan, A 2D Analytical Surface Potential Model For Dual Material Gate Mosfets With Reduced Short Channel Effects, ICON 2010, 2010
  57. N.B.Balamurugan, Silicon-On-Nothing (SON) An Innovative Architecture for Advanced CMOS: A Review, ETWT2010, 2010
  58. N.B.Balamurugan, Dsigital Signal processing Lab Manual, DSP,
  59. N.B.Balamurugan, Signals and Systems Lab Manual, DSP,
  60. N.B.Balamurugan, A New Scaling Theory For Fully Depleted Soi Dual Material Surrounding Gate Nano-Scale Mosfets: Including Effective Conductive Path Effect, IEEE Indicon , 2007
  61. N.B.Balamurugan, A Novel Scaling Theory For Dual Material Surrounding Gate Nanoscale Mosfets, International Conference On Materials For Advanced Technologies (ICMAT) , Singapore, 2007
  62. N.B.Balamurugan, Two Dimensional Analytical Modeling Of Dual Material Surrounding Gate Mosfets For Nanoscale Cmos Applications, International Conference On Materials For Advanced Technologies (ICMAT), Singapore, 2007
  63. N.B.Balamurugan, A New Analytic Description Of Short-Channel Effects In Fully Depleted Single Gate Soi Mesfets For Low Power Vlsi Applications, Proceedings Of The National Conference On Signal Processing Communication And Networking(ICNSPC), 2007
  64. N.B.Balamurugan, A New Scaling Theory For Nanoscale Fully Depleted Dual Material Surrounding Gate Mosfets, Proceedings Of The National Conference Of Nanoscale Devices And Systems(Nds ), 2007
  65. N.B.Balamurugan, Two Dimensional Analytical Modelling Of Drain Induced Barrier Lowering Of Fully Depleted Short- Channel Soi Mesfets, Opto electronic Materials And Thin Films For Advanced Technology, 2005
  66. N.B.Balamurugan, A Monte Carlo Simulation Of An Ion-Implanted Gaas Opfet, Xxx Optical Society Of India Symposium , 2005
  67. N.B.Balamurugan, I-V Character Tics Of A GaAs Mesfet Photo Detector For Oeic Photo Receivers, Applied Photonics Superresolution And Photonics, 2005
  68. N.B.Balamurugan, Threshold Voltage Model Of Short Channel Gaas Opfet For Optical Communication System, Nce-12,Tce, 2005
  69. N.B.Balamurugan, Current- Voltage Character Tics Of A Low Pinch Off Voltage Voltage Gaas Mesfet, Nce-12,Tce, 2005
  70. N.B.Balamurugan, Time Dependent Anaylsis Of An Opfet Using Monte Carlo Simulation, Xxx Optical Society Of India Symposium , 2005
  71. N.B.Balamurugan, Capacitance Model Of Ion Implanted Opfet, Applied Photonics Superresolution And Photonics, 2005
  72. N.B.Balamurugan, Numerical Simulation Of Switching Characteristics Of Gaas Opfet, Xxx Optical Society Of India Symposium , 2005
  73. N.B.Balamurugan, Time Dependent Behaviour Of An Ion-Implanted Generalised Model Of Gaas Opfet, NCE-12,TCE, 2005
  74. N.B.Balamurugan, Spice Modelling Of an Ion-Implanted Gaas Opfet, Optical Society Of India Symposium , 2005
  75. G.Lakshmi Priya, S.Manikandan, N.B.Balamurugan, S.Theodore Chandra "A Novel Scaling Theory for Single gate AlInSb/InSb High Electron Mobility Transistors", ICCNT'2014,Mepco Schlenk Engineering College, Sivakasi,December 18-19,2014
  76. Dr. N.B. Balamurugan, M.Hemalatha 2D Modelling and Simulation of Triple Material Surrounding Gate Junctionless MOSFETs for suppressing short channel effects.International Conference On Contemporary Engineering and Technology,11th April 2021, prince shri venkateshwara padmavathy engineering college, Chennai.
  77. Dr.N.B.Balamurugan, G.Raja Gowri ,S.P.Murshidhabegum, M.Venkatesh "Analytical Modeling and simulation of Triple Material Surrounding Gate Stack Tunnel Field Effect Transistors" NCCT ’16 National conference on Communication Technologies, March- 23,2016, MEPCO Schlenk Engineering College
  78. Dr. N.B Balamurgan, A 2D Analytical Modeling Of Dual Material Surrounding Gate Junctionless Tunnel Field Effect TransistorInternational Conference On Microwave and Optical Communication,2nd March 2017, Alagappa Chettiar College Of Engineering And Technology, Karaikudi.
  79. N.B.Balamurugan, Potential and Electric field model for 18nm SG Tunnel Field Effect Transistor, ICEVENT2013,
  80. N.B.Balamurugan, Parameter Extraction for single electron transistor based on master equation approach , ICEVENT2013,
  81. N.B.Balamurugan, Modeling the Inversion Charge Centroid in Tri-Gate MOSFETs including Quantum Effects, ICEVENT2013,
  82. N.B.Balamurugan, Performance analysis and threshold voltage modeling of surrounding gate Silicon Nanowire Transistors, ICEVENT2013,
  83. N.B.Balamurugan, High performance double gate Silicon Nanowire Transistors, ICEVENT2013,
  84. N.B.Balamurugan, Quantum Centroid Modeling for Surrounding Gate MOSFETs, CODIS2012 Jadavpur University Kolkata,
  85. N.B.Balamurugan, Electrical Characteristics of silicon and Germanium Nanowire transistors-A simulation study, CODIS2012 Jadavpur University Kolkata, 200
  86. N.B.Balamurugan, FPGA Synthesis of SIRM Fuzzy System Classication of Diabetil Epilepsy Risk Level, ICMOC,
 Books
  1. Analog Electronic Devices: Theory and Practicals, AICTE, UG Books, New Delhi, 2024.
  2. Modeling of Gate Engineered TFET: Challenges and Opportunities, CRC Press, 2023
  3. Jothi sangeeth, N B Balamurugan, Parameter Evaluation of Diabetic Neuropathy, Lambert publications
  4. NB Balamurugan , Analytical Modeling of High Electron Mobility TransistorsHandbook for III-V High Electron Mobility Transistor Technologies, 173
  5. VDAT 2018 Proceedings ,Springer CCIS,S.Rajaram,N.B.Balamurugan,D.Gracia Nirmala Rani
  6. Digital Signal processing Lab Manual, National Instruments, Bangalore - 2010
  7. Signals and Systems Lab Manual, National Instruments, Bangalore-2009

 Projects

TITLE SPONSORING AGENCY AMOUNT RESPONSIBILITY
Modeling and simulation of Multigate InSb/AlInSb Based High Electron Mobility Transistors for 5G Applications SERB 18 Lakhs Principal Investigator
Modeling and Simulation of High Electron Mobility Transistors(HEMTs) for High Frequency CMOS Applications AICTE 16 lakhs Principal Investigator
Modeling and Simulation of Multigate nanowire transistors for low power CMOS Application AICTE 10.3 lakhs PI
Analytical modeling and simulation of quantum mechanical effects in multigate MOSFETs DST 25.1 Lakhs Mentor

 Seminar, Conference, Workshop Attended

  1. 38th International conference on VLSI Design and 24th International Conference on Embedded Systems, , 04-01-2025 to 08-01-2025
  2. 28th IEEE International Symposium on VLSI Design and Test (VDAT-2024), 01-09-2024 to 03-12-2024
  3. 37th International COnference on VLSI Design and 23rd International Conference on Embedded System (VLSID 2024), Kolkata, India, 06-01-2024 to 10-01-2024
  4. TCAD Workshop on "Modern Transistor Designs" by IEEE EDS Delhi Chapter, 30-11-2023 to 01-01-0001
  5. Workshop on "Electrical and thermal characterization of HEMT," organized by IEEE EDS Delhi Chapter, 07-09-2023 to 01-01-0001
  6. workshop on "Evolution of Transistor and Emerging Research Devices", IEEE EDS Delhi Chapter, 11-08-2023 to 07-12-2023
  7. FDP on " Introduction to Machine Learning", 8 Weeks, 08-07-2023 to 29-09-2023
  8. FDP on Joy of Computing using python, , 07-07-2023 to 29-10-2023
  9. Faculty Development Programme on " Leadership Skills" organized by Thiagarajar College of Engineering, , 20-12-2022 to 21-12-2022
  10. Faculty Development Programme on" Next Generation Electronic Devices" organized by Univesity of Jammu,, 22-03-2022 to 01-01-0001
  11. Bangalore INDIA NANO conference on "Nanotechnology", Bangalore, India,, 07-03-2022 to 09-03-2022
  12. 35th International Conference on VLSI Design and 21st International Conference on Embedded Systems (VLSID 2022), , 26-02-2022 to 02-03-2022
  13. Faculty Development Programme on "Wireless communication" organized by TCE, Madurai.24.01.2022, 31-01-2022 to 01-01-0001
  14. Online FDP on "Remote Acess to Intel FPGAs & SoCs for Embedded System Design" organized by SASTRA Deemed to be University,in association with Intel Technologies Ltd, Bangalore., 11-11-2021 to 13-11-2021
  15. TEQIP sponsored workshop on "Analog IC design using free software tools" on 02-06-2020 at IIT hyderabad. , 02-06-2021 to 02-06-2021
  16. TEQIP III Sponsored workshop on VLSI BASED SYSTEM DESIGN.IIITG,Guwahati, , 12-03-2021 to 14-03-2021
  17. 34 th International conference on VLSI Design, IIITG, Guwahati, , 20-02-2021 to 24-02-2021
  18. Capacity Building Workshop for the Development of TCE Online Courses, 30-01-2021 to 30-01-2021
  19. Capacity Building Workshop for the Development of TCE Online Courses Part -I, 23-01-2021 to 23-01-2021
  20. TEQIP-III Sponsored Two day Faculty Development Programme on “Design, Develop and Deliver online courses through MOODLE platform”, Department of Technical Education State Project Implementation Unit, Tamil Nadu & Coimbatore Institute of Technology, Coimbatore., 23-04-2020 to 24-04-2020
  21. TEQIP Sponsored Two Weeks online certification Course on "Digital Transformation in Teaching Learning Process" , offered by IIT Bombay, Funded by the Ministry of HRD, Govt of India., 06-04-2020 to 22-04-2020
  22. 33rd International conference on VLSI design,Bengaluru, India, 04-01-2020 to 08-07-2020
  23. AICTE-QIP Sponsored Two week short term course on "5G Wireless Communications" , 28-01-2019 to 10-02-2019
  24. 32nd International conference on VLSI Design ,New Delhi,India, 05-01-2019 to 09-01-2019
  25. AICTE-QIP sponsored one week Short Term Course on “Vision Based Robot Navigation & Manipulation” - TCE ,Madurai, 22-01-2018 to 28-01-2018
  26. 31st International conference on VLSI design, Pune, -India, 06-01-2018 to 10-01-2018
  27. AICTE-QIP sponsored one week STTP on “Array Signal Processing in Radar & Wireless Communications,TCE,Madurai, 04-12-2017 to 10-12-2017
  28. Intellectual Property Rights and Innovations ,TCE,Madurai, 06-10-2017 to 06-10-2017
  29. Engineering Education & Research Seminar , National Instruments, India,Organized by TCE, Madurai, 30-03-2017 to 30-03-2017
  30. Two Week ISTE STTP on CMOS,Mixed signal and Radio frequency VLSI , IIT Kharagpur, India,Organized by TCE,Madurai, 30-01-2017 to 04-02-2017
  31. 30th International conference on VLSI design, Hyderabad,India, 09-01-2017 to 13-01-2017
  32. 29th International Conference on VLSI Design and 15th International Conference on Embedded Systems,Kolkatta,India, 04-01-2016 to 08-01-2016
  33. TEQIP II Sponsored Workshop on 'Physics in Engineering' organized by the department of Physics, 05-11-2015 to 06-11-2015
  34. TEQIP sponsored Faculty Development program on Assesment and Evaluation : Principles and Practices,TCE Madurai,, 02-11-2015 to 04-11-2015
  35. TEQUIP sponsored workshop on Good Learning, TCE Madurai,, 02-06-2015 to 04-06-2015
  36. 28th International Conference on VLSI Design, Banglore, India, 03-01-2015 to 07-01-2015
  37. Cadence Tools Training on Analog and Digital Design Flow conducted by Cadence, TCE, Madurai 625015, 11-12-2014 to 12-12-2014
  38. Alumni Relations Conference - India at Indian School of Business,Hyderabad Campus, 01-11-2014 to 01-11-2014
  39. 27th International conference on VLSI design, IITBombay, Mumbai,India, 05-01-2014 to 10-01-2014
  40. Fundamentals of C programming, TCE, Madurai, 09-12-2013 to 09-12-2013
  41. TEQUIP sponsored workshop on Outcome based Education, TCE, Madurai., 12-11-2013 to 13-11-2013
  42. NI Education Day, Chennai, 16-10-2012 to 17-10-2012
  43. Mission 10X workshop, THIAGARAJAR COLLEGE OF ENGINEERING, MADURAI, 22nd -26th Aug-2011
  44. IFRIO Transceiver, THIAGARAJAR COLLEGE OF ENGINEERING, MADURAI, 24th-27th Jan-2011
  45. 24th International Conference on VLSI Design, IIT,Chennai, 1st and 2nd Jan-2011
  46. NI Education Day Conducted by National Instruments, Bangalore 14th Dec-2010, 14-12-2010 to 01-01-0001
  47. Faculty Development Program on Analog Sysytem Design, Texas Instruments,Bangalore., 15th to 19th November,2010
  48. ADVANCED GRAPHICAL SYSTEM DESIGN WITH LABVIEW II, INFOSYS MYSORE CENTER, 6th July 10th July, 2009 5 Days
  49. LABVIEW BASICS I&II TRAINING COURSE, NATIONAL INSTRUMENTS BANGALORE, 23rd -27th March, 2009 5 Days
  50. NATIONAL INSTRUMENTS LABVIEW AND ELVIS, THIAGARAJAR COLLEGE OF ENGINEERING, MADURAI, 28th April 2nd May 2008 5 Days
  51. ADVANCED VLSI DESIGN, HUBLI, 15th -29th December,2007 15 Days
  52. VLSI DESIGN, TEXAS INSTRUMENTS, BANGALORE, 3rd-7th Decmber, 2007 5 Days
  53. ANALOG VLSI DESIGN, THIAGARAJAR COLLEGE OF ENGINEERING, MADURAI, 4th -15th June, 2007 12 Days
  54. NANOTECHNOLOGY CURRENT STATUS AND CHALLENGES , IITD, DELHI, 17th and 18th March, 2007 2 Days
  55. VHDL &FPGA DESIN FOR WIRELESS BASEBAND SYSTEMS, THIAGARAJAR COLLEGE OF ENGINEERING, MADURAI, 2005
  56. FIBEROPTIC COMMUNICATION DEVICES, SYSTEMS AND NETWORKS, INDIAN INSTITUTE OF SCIENCE, BANGALORE, 2005
  57. PRIMER COURSE IN BIOMEDICAL ENGINEERING, INDIA INSTITUTE OF TECHNOLOGY , CHENNAI, May 31-June 5 2004
  58. NEURO FUZZY EXPERT SYSTEMS , ACCET,  KARAIKUDI, 9-6-03 to 23-6-03
  59. OPTOELECTRONICS INTEGRATED CIRCUITS PHOTORECEIVERS & SYSTEMS , PSNAECT,DINDUGAL, 24th and 25th January 2003
  60. ARCHITECTURE AND PROGRAMMING OF DIGITAL SIGNAL PROCESSORS, ANNA UNIVERSITY,CHENNAI, 10th and 13th April 2002
  61. WAVELETS AND THEIR APPLICATIONS , ANNA UNIVERSITY, CHENNAI, January 4-8 2002
  62. WAVELETS AND ITS APPLICATION IN SIGNAL PROCESSING, REC,CALICUT, 16 -27 July 2001
  63. OPTOELECTRONICS,FIBER OPTICS AND PHOTONICS, INTERNATIONAL SCHOOL OF PHOTONICS,CUSAT & NEST PHOTONICS, KOCHI, 9-11 December
  64. NI Education Day, Chennai.,
  65. 32nd International conference on VLSI design, Delhi, -India,05-01-2019 to 09-01-2019 , 01-01-0001 to 01-01-0001

 Seminar, Conference, Workshop Organised

  1. Faculty Development Program on " The chronicles of Silicona: Quest for Novel and Enchanted Devices" Sponsered by AICTE, ATAL, 31-07-2024 to 08-08-2024
  2. Faculty Development Program on "Enhancing VLSI Device Modeling through Machine Learning" Joined and organized by GCT and TCE, 08-02-2024 to 10-02-2024
  3. Faculty Development Programme on "From Code to Conductors:Enhancing Semiconductor Device model through Machine Learning" Sponsered by AICTE- ATAL, 18-12-2023 to 23-12-2023
  4. Faculty Development Program on "Life at TCE" , 31-07-2023 to 03-08-2023
  5. Two days Faculty Development Program on " VLSI Design-Universal Design Methodology (UVM)", TCE, Madurai, , 23-09-2022 to 24-12-2022
  6. FDP on Life at TCE, , 25-08-2022 to 26-08-2022
  7. Workshop on " VLSI Circuits Design and Device Modeling: Recent Trends and Advancements", TCE, Madurai, 11-11-2021 to 13-11-2021
  8. Workshop on Introduction to Various types of signals.TCE, Madurai , 03-02-2021 to 03-02-2021
  9. AICTE Sponsored STTP on " Challenges and Opportunities in Nano Electronics and VLSI Nano electronic Device" TCE, Madurai , 18-11-2019 to 23-11-2019
  10. AICTE sponsored A Three Day National Seminar on "Research Issues and opportunities in VLSI and Nanoelectronic device, 12-04-2019 to 14-04-2019
  11. 22nd International Symposium on " VLSI Design and Test (VDAT 2018)" , TCE Madurai, 28-06-2018 to 30-06-2018
  12. TEQIP – III sponsored One Week Faculty Development Programme (FDP) on “Design,Modeling,Simulation & Analysis of Advanced Electronic Circuits,TCE, Madurai, 08-11-2017 to 14-11-2017
  13. TEQIP – II sponsored Two Weeks Faculty Development Programme (FDP) on “CMOS VLSI System Integration : Design, Analysis, Implementation & Simulation”,TCE, Madurai, 12-12-2016 to 25-12-2016
  14. TEQIP sponsored One Week workshop on “Electronic Circuits: Theory & Practice”, 23-05-2016 to 29-05-2016
  15. Two day Workshop on Analog and Digital System Design using Cadence Tools, TCE MADURAI, 27-02-2016 to 28-02-2016
  16. Training Programme on LAB VIEW , TCE MADURAI, 20-02-2016 to 21-02-2016
  17. Two day Workshop on Analog and Digital System Design using Cadence Tools, TCE MADURAI, 30-01-2016 to 31-01-2016
  18. Training Programme on LAB VIEW, TCE MADURAI, 23-01-2016 to 26-01-2016
  19. Training Programme on LAB VIEW , TCE Madurai.,, 28-12-2015 to 31-12-2015
  20. TEQIP sponsored One Week workshop on “Semiconductor Devices: Theory & Practice”,TCE,Madurai,, 30-11-2015 to 06-12-2015
  21. Two days Training Programme on Simulation of Semiconductor Devices using PSPICE, TCE Madurai, 21-02-2015 to 22-02-2015
  22. Two Days Workshop on Solid State Device Modeling and Simulation, TCE, Madurai, 11-11-2014 to 12-11-2014
  23. Two days Training Programme on Analog System Design Using ASLKv2010 Starter Kit, TCE,Madurai , 25-10-2014 to 26-10-2014
  24. Training Programme on LABVIEW, Thiagarajar College of Enginnering, Madurai, 02-06-2014 to 05-06-2014
  25. IEEE EDS Mini colloquia on Past, Present and Future of Nano CMOS Technologies, TCE,madurai, 27-12-2013 to 28-12-2013
  26. Anna University, Chennai Sponsored Faculty Development Training Programme on EC 2251- Electronic Circuits-II, 11-12-2013 to 17-12-2013
  27. TEQIP Sponsored Two days workshop on Computer Aided Design of Simulation of Electronic Circuits, TCE, Madurai, 21-11-2013 to 22-11-2013
  28. Two Days seminar on Analysis and Design of Analog Integrated Circuits, TCE, Madurai, 03-05-2013 to 04-05-2013
  29. Training Programme on LabVIEW, TARC SEMINAR Hall, 27-12-2012 to 30-12-2012
  30. Workshop on Solid State Device Modeling, 17-12-2012 to 18-12-2012
  31. Training Programme on Analog System Design using ASLKv2010 Starter Kit, 29-09-2012 to 30-09-2012
  32. Training Programme on Analog System Design using ASLKv2010 Starter Kit, 07-09-2012 to 08-09-2012
  33. Training course on Lab View, Thiagarajar College Of Engineering,Madurai, 07-09-2012 to 08-09-2012
  34. Training course on Lab View, Thiagarajar College Of Engineering,Madurai, 08-08-2012 to 11-08-2012
  35. Training course on Lab View, Thiagarajar College Of Engineering,Madurai, 06-06-2012 to 09-06-2012
  36. Training course on Lab View, Thiagarajar College Of Engineering,Madurai, 02-01-2012 to 05-01-2012
  37. Training course on Lab View, Thiagarajar College Of Engineering,Madurai, 19-12-2011 to 22-12-2011
  38. Training course on Lab View, Thiagarajar College Of Engineering,Madurai, 06-12-2011 to 09-12-2011
  39. Workshop on Solid State Device Modeling and Simulation, Thiagarajar College Of Engineering,Madurai, 4th and 5th Nov,2011
  40. Training course on Lab View, Thiagarajar College Of Engineering,Madurai, 5th to 8th Jan-2011
  41. Workshop on 3D System Design and Device Modeling, Thiagarajar College Of Engineering,Madurai, 29th and 30th Dec-2010
  42. Training course on Lab View, Thiagarajar College Of Engineering,Madurai, 20th to 23rd Dec-2010
  43. Workshop on Solid State Device Modeling, Thiagarajar College Of Engineering,Madurai, 26th to 28th November,2010
  44. Training course on LabView, Thiagarajar College Of Engineering,Madurai, 10th to 13th November,2010
  45. National Conference on " Emerging Trends in Wireless Technologies (ETWT 2010)", Thiagarajar College of Engineering, Madurai , 23-07-2010 to 24-07-2010
  46. An Intensive Training Program on Lab View , Thiagarajar College Of Engineering,Madurai,
  47. Course on Proficiency in LabVIEW, Thiagarajar College Of Engineering,Madurai, 2009
  48. AICTE sponsored Two Weeks workshop on Adaptive Signal Processing and their application to speech processing, RVSCET, Dindigul, 3rd -15th May, 2004
  49. Adaptive Signal processing and their application to speech processing, RVSCET, Dindigul, 3.5.2004 - 15.5.2004 , 13 days
  50. Digital Signal Processing, RVSCET, Dindigul, 28.6.2003-29.6.2003 , 2 days
  51. Advanced Digital Signal Processing, RVSCET , Dindigul, 9.8.2002-10.8.2002 , 2 days
  52. Proficiency in lab view, Thiagarajar College Of Engineering,Madurai,
  53. VLSI Circuits Design and Device Modeling: Recent Trends and Advancements, TCE, Madurai, 11-11-2021 to 13-11-2021, 01-01-0001 to 01-01-0001
  54. FDP on "Life at TCE", TCE, Madurai, 25-08-2022 and 26-08-2022., 01-01-0001 to 01-01-0001

 M.E./Ph.D. Scholars

NAME OF SCHOLAR COURSE AREA OF RESEARCH STATUS
P.Suveetha Dhanaselvam Ph.D Compact modeling and simulation of Triple material Surrounding gate MOSFETsFETs Completed
P.Vimala Ph.D Quantum Mechanical Effects in Multigate MOSFETs Completed
T.S.Arun Samuel Ph.D Analysis and Design of Multigate TFET for low power applications Completed
B.Buvaneswari Ph.D Analytical Modeling and Simulation of Multigate MOSFETs Completed
M.Venkatesh Ph.D Design and Analysis of Halo Doped Tunnel Field Effect Transistors With High-K Dielectric Materials For Ultra Low Power Applications Completed
K.Sowmya Ph.D Analytical Modeling of Silicon Nanowire Transistors Completed
T.Venish Kumar Ph.D Analytical Modeling and Simulation of Multi-Gate MOSFETs Completed
V.Dharshana Ph.D Analytical Modeling And Simulation of Dual Material Surrounding Gate Tunnel FET with Stacked Gate Oxide Completed
S.Manikandan Ph.D Compact modeling and simulation of Multi gate Junctionless Transistors Completed
M.Karthigai Pandian Ph.D Analytical Modeling and Simulation of Advanced Surrounding Gate Silicon Nanowire Transistors Completed
L.Sheela Ph.D Analysis and Simulation of Single Electron Transistors Completed
S.Theodore Chandra Ph.D Analytical Modeling and Simulation of HEMT Completed
D.Saraswathi Ph.D Analytical Modeling and Simulation of Tri Material Gate All Around Silicon Nanowire TFETs Completed
G.Lakshmi Priya Ph.D Analytical Modeling And Simulation of Dual Material Surrounding Gate Tunnel FET with Stacked Gate Oxide Completed
I. Sheik Arafat Ph.D Modeling,Simulation,Analysis of certain scattering effects in Silicon Nanowire Transistors Completed
P.Vanitha Ph.D Tunnel Field Effect Transistors Completed
M.Jothi Ph.D Design and Simulation of VLSI fuzzy Processing Completed
S.Preethi Ph.D Analytical Modeling and Simulation of Multi – Gate MOSFETs Completed
B. Jasmine Priyadharshini Ph.D 2D analytical modeling and simulation of multigate MOSFET for 5G apllications. Ongoing
S. Rajkumar Ph.D Analytical and Simulation Modeling of Multigate High Electron mobility Transistors. Ongoing
M Hemalatha Ph.D Analytical Modeling and Simulation of Multigate MOSFETs Ongoing
E.Rajalakshmi Ph.D Modeling and Simualtion of Multigate MOSFETs Ongoing
V. Charumathi Ph.D Design and modeling of Surrounding Gate TFETs Ongoing
V. karutharaja Ph.D Analytical modeling of Nanosheet FETs Ongoing

 Lectures Delivered

TOPIC DELIVERED AT PERIOD
Development of Low Power Semiconductor Sensors to extend the Battery Life of IOT Devices and reduce Energy Consumption Veltech Rangarajan Dr Sangunthala Science and Technology 05-12-2024 to 05-12-2024
Semiconductor Device Modeling and Simulation Techniques Thiagarajar College of Engineering 19-11-2024 to 19-11-2024
VLSI Device Modeling MAM College of Engineering 06-08-2024 to 06-08-2024
Navigating Nanoscale: Insights into in VLSI Device Modeling for Next Generation Electronics. SASTRA Deemed University, Tanjore 30-03-2024 to 30-03-2024
Navigating Future Frontiers: Research Challenges in VLSI Device Modeling Over the Next 5 Years. AAA College of Engineering, Sivakasi 24-02-2024 to 24-02-2024
Semiconductor Device Design AICTE-ATAL FDP, Veltech, Chennai 21-12-2023 to 21-12-2023
VLSI Device Modeling AICTE- ATAL FDP, TCE, Madurai 20-12-2023 to 20-12-2023
Employability Skills Anna University, Madurai 20-10-2023 to 20-10-2023
Advance VLSI Device Modeling SRM Institute of Science and Technology 06-03-2023 to 06-03-2023
New Trends in VLSI Device Modeling for Real Time Application. Bannariamman Institute of Technology 09-10-2021 to 09-10-2021
TFET as Biosensors theory and modelling Approches Harcourt Butler Technical University 05-07-2021 to 09-07-2021
MOSFET Based BIOSENSORs for Healthcare Applications P.S.R Engineering College 07-06-2021 to 11-06-2021
Modern teaching Learning Tools and Methodologies in Engineering and Technology Education Francis Xavier Engineering College 09-11-2019 to 09-11-2019
Recent Developments in Health care Technologies using Modern VLSI Devices National Engineering College, Kovilpatti 01-02-2019 to 01-02-2019
Two Port parametric Converison Anna University Madurai 20-12-2018 to 20-12-2018
Mathematical Method and Techniques in analog VLSI Device Modeling Alagappa Chettiar College of Engg & Tech ,Karaikudi 19-12-2018 to 19-12-2018
VLSI Design for Wireless Communication – Milestones & Challenges Sethu Institute of Technology 19-07-2018 to 19-07-2018
Use of ICT Tools for effective teaching methodology Francis Xavier Engineering College 19-06-2018 to 19-06-2018
VLSI Device Modeling IIT – Kanpur , India 02-05-2018 to 02-05-2018
Multi gate Transistors & Special Diodes K.L.N. College of Engineering 31-03-2018 to 31-03-2018
Data Converters M.Kumarasamy College of Engineering,Karur 10-02-2018 to 10-02-2018
VLSI Device Modeling : Research Perspective K.L.N. College of Information Technology 27-01-2018 to 27-01-2018
Nanotechnology based VLSI Physical design Francis Xavier Engineering College 08-12-2017 to 08-12-2017
Electronic Circuits K.L.N College of Engineering 14-10-2017 to 14-01-2018
Quick Tour on VLSI Design PSNA College of Engineering and Technology 07-09-2017 to 07-09-2017
Relative Grading System Bannari Amman Institute of Technology 17-08-2017 to 17-08-2017
Linear Integrated Circuits M.Kumarasamy College of Engineering,Karur 27-01-2017 to 27-01-2017
Design Security Algorithm for Xilinx FPGA SNS College of Engineering, Coimbatore 03-09-2016 to 03-09-2016
Multiscale Modeling of Nanoelectronic Devices – A Research Prespective PSG College of Technology,Coimbatore 27-07-2016 to 27-08-2016
Research Issues in Analog VLSI Device Modeling Anna University Trichy 16-06-2016 to 16-08-2016
Advances in VLSI, Embedded and Neuroscience in Medical systems PSNA College of Engineering and Technology 12-04-2016 to 12-04-2016
Recent Research Trends in VLSI Technology PSNA College of Engineering and Technology,Dindigul 17-03-2016 to 17-03-2016
Virtual Instrumentation M.Kumarasamy College of Enginnering,Karur 03-03-2016 to 03-03-2016
Applications of Operational Amplifiers M.Kumarasamy College of Engineering,Karur,TamilNadu 27-01-2016 to 27-01-2016
Designing of Combinational Logic Circuits SriGuru Institute of Technology,Coimbatore 14-12-2015 to 14-12-2015
Analog VLSI Design SSM Institute of Engineering and Technology, Dindigul. 11-11-2015 to 11-11-2015
Linear Integrated Circuits and Systems KLN College of Engineering, Sivagangai 15-06-2015 to 15-06-2015
Modelling of Devices Regional Office Anna University Tirunelveli Region 19-03-2015 to 19-03-2015
Electronics Circuits II Theni Kammavar Sangam College of Engineering, Theni 05-03-2015 to 05-03-2015
Power Amplifiers SCAD Engineering College, Tirunelveli 05-11-2014 to 05-11-2014
Advanced Analog VLSI Devices CARE, Trichy 04-12-2013 to 04-12-2013
Simulation of Electronic Circuits Francis Xavier Engineering college, Tirunelveli 19-11-2013 to 19-11-2013
Hands on training programme on Labview Anna University Tiruneveli region ,Tirunelveli 05-11-2013 to 05-11-2013
Simulation of Circuits and Systems Srinivasan College of Engineering and Technology, Perampulur, Trichy 25-10-2013 to 25-10-2013
VLSI Solid State Device Modeling and Simulation KPR Institute of Technology, Coimbatore 21-10-2013 to 22-10-2013
Application of Electronic Circuits II Kumarasamy College of Engineering & technology, Karur 23-09-2013 to 23-09-2013
Future of NanoCMOS Technology Sardar Raja Colleg of Engineering and Technology, Alangulam 30-08-2013 to 30-08-2013
VLSI Design Bharath Niketan Engineering College 23-08-2013 to 23-08-2013
Application of Electronic Circuits I Kumarasamy College of Engineering & technology, Karur 23-07-2013 to 23-07-2013
Advanced VLSI Devices National Engineering College 16-07-2013 to 16-07-2013
VLSI Device Modeling Jeyaram Engineering College 21-05-2013 to 21-05-2013
VLSI Device Modeling Srinivasan Engineering College, Perampular 17-05-2013 to 17-05-2013
Wireless Communication Anna University Regional Centre , Madurai 17-04-2013 to 18-09-2016
Introduction to VLSI Devices PGP College of Engineering and Technology, Namakkal 28-02-2013 to 28-02-2013
VLSI & Nanotechnolgy SKP Engineering College,Tiruvannamalai 07-01-2013 to 09-09-2016
VLSI & Nanotechnolgy SKP Engineering College,Tiruvannamalai 07-01-2013 to 09-09-2016
CMOS Technology Anna University Regional Centre,Coimbatore 12-12-2012 to 18-09-2016
CMOS VLSI Anna University, Coimbatore one week Faculty development programme on VLSI Design
EKV MOSFET Modelling Senkunthar Engineering college
BenchMark Circuits and Quality Assurance Senkunthar Engineering college, Tiruchengode
Effects and Modeling of Process Variation and Device Mismatch KPR Institute of Technology, Coimbatore. 18-11-2012 to 18-11-2012
EKV MOSFET Model KPR Institute of Technology, Coimbatore
Distortion Analysis of MOSFETs Srinivasan Engineering College, Perambalur. 06-10-2012 to 06-10-2012
Noise Modeling of MOSFET Dr.Sivanthi Aditanar College of Engineering, Tiruchendur. 03-10-2012 to 03-10-2012
Recent Development of VLSI in Health Care Application PSNA College of Engineering and Technology, Dindigul. 24-08-2012 to 24-08-2012
Research issues in VLSI device Modeling SBMCE 08-08-2012 to 08-08-2012
Research issues in VLSI Device modelings Karunya University, Coimbatore
Modeling of VLSI Devices MCET, Kerala
Modeling of Semiconductor Devices -a basic view Sudharsan Engineering College, Tiruchirappalli.
Research issues in VLSI Device modelings MIET Engineering College, Trichy
Fundamentals of Device Modeling Sethu Institute of Technology 18th Nov,2011
Labview for Beginners NPR College of Engineering,Dindigul - 624 003. 16.08.2011
VLSI Device Modeling Pandian Saraswathi Yadav Engineering College, Sivagangai 28th March,2011
VHDL Design Ultra College of Engineering and Technology for Women, Madurai 23rd March,2011
Noise Modeling in Multigate MOSFETs Sethu Institute of Technology 12th Dec,2010
Advanced Device Modeling and Simulation Methods Sethu Institute of Technology 11th Dec,2010
Nanoscale Device Modeling Francis Xavier Engineering College,Tirunelveli 22,October,2010
Recent trends in VLSI Technology Velammal College of Engineering and technology, Madurai 1.10.2010
Recent trends in Modern Electronics Capes Institute of Technology, Nagarcoil. 12th Aug,2010
Recent trends in Micro Electronics Velammal College of Engineering and Tech, Madurai. 1st April, 2010
Design of blocking oscillator Velammal College of Engineering and Tech, Madurai. 20th December, 2009

 Membership

NAME OF SOCIETY DETAILS PERIOD
ISTE Life Member (LM 31045) 14.07.2001
IEEE (EDS) Senior Member 90837460 2010

  Other Achievements

  1. Conference Chair, International Conference on Energy, Material and Communication Engineering, TCE, Madurai, 2023